inchange semiconductor product specification silicon npn power transistors 2N6291 2n6293 description ? with to-220 package ? low collector saturation voltage ? wide safe operating area applications ? for medium power switching and amplifier applications such as:series and shunt regulators and driver and output stages of high-fidelity amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit 2N6291 60 v cbo collector-base voltage 2n6293 open emitter 80 v 2N6291 50 v ceo collector-emitter voltage 2n6293 open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i b base current 3 a p t total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.125 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2N6291 2n6293 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2N6291 50 v ceo(sus) collector-emitter sustaining voltage 2n6293 i c =0.1a ;i b =0 70 v 2N6291 i c =2.5a;i b =0.25a v cesat-1 collector-emitter saturation voltage 2n6293 i c =2a;i b =0.2a 1.0 v v cesat-2 collector-emitter saturation voltage i c =7a;i b =3a 3.5 v 2N6291 i c =2.5a ; v ce =4v v be-1 base-emitter on voltage 2n6293 i c =2a ; v ce =4v 1.5 v v be-2 base-emitter on voltage i c =7a ; v ce =4v 3.0 v 2N6291 v ce =40v; i b =0 i ceo collector cut-off current 2n6293 v ce =60v; i b =0 1.0 ma 2N6291 v ce =56v; v be =-1.5v v ce =50v; be =-1.5v,t c =150 ?? 0.1 2.0 i cex collector cut-off current 2n6293 v ce =75v; v be =-1.5v v ce =70v; be =-1.5v,t c =150 ?? 0.1 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2N6291 i c =2.5a ; v ce =4v h fe-1 dc current gain 2n6293 i c =2a ; v ce =4v 30 150 h fe-2 dc current gain i c =7a ; v ce =4v 2.3 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 250 pf f t transition frequency i c =0.5a ; v ce =4v;f=1mhz 10 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2N6291 2n6293 package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm)
|
